Mapping quantum Hall edge states in graphene by scanning tunneling microscopy

Article

关键词: ELECTRONIC-PROPERTIES;    NEUTRAL-MODES;    SPECTROSCOPY;    CONDUCTANCE;    LOCALIZATION;   

DOI  :  10.1103/PhysRevB.107.115426

来源: SCIE

【 摘 要 】

Quantum Hall edge states are the paradigmatic example of bulk-boundary correspondence. They are prone to intricate reconstructions calling for their detailed investigation at high spatial resolution. Here, we map quantum Hall edge states of monolayer graphene at a magnetic field of 7 T with scanning tunneling microscopy. Our graphene sample features a gate-tunable lateral interface between areas of different filling factor. We compare the results with detailed tight-binding calculations, quantitatively accounting for the perturbation by the tip-induced quantum dot. We find that an adequate choice of gate voltage allows for mapping the edge state pattern with little perturbation. We observe extended compressible regions, the antinodal structure of edge states, and their meandering along the lateral interface.

【 授权许可】

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