Valence-band photoemission from the GaN(0001) surface

Article

关键词: ELECTRONIC-PROPERTIES;    WURTZITE GAN;    SPECTROSCOPY;    PARAMETERS;    GAAS(110);    ALN;   

DOI  :  10.1103/PhysRevB.60.11577

来源: SCIE

【 摘 要 】

A detailed investigation by one-step photoemission calculations of the GaN(0001)-(1 X 1) surface in comparison with recent experiments is presented in order to clarify its structural properties and electronic structure. The discussion of normal and off-normal spectra, reveals through the identified surface states, clear fingerprints for the applicability of a surface model proposed by Smith et al. [Phys. Rev. Lett. 79, 3934 (1997)]. Especially the predicted metallic bonds are confirmed. In the context of direct transitions, the calculated spectra allow us to determine the valence-band width and to argue in favor of one of two theoretical bulk band structures. Furthermore, a commonly used experimental method to fix the valence-band maximum is critically tested. [S0163-1829(99)05939-1].

【 授权许可】

Free