Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

Nano-Micro Letters

Review

Lei Yang¹  Zimeng Ye¹  Chao Tan¹  Zegao Wang¹  Mingdong Dong²  Yi Ouyang²  Xiaolei Huang³ 

[1] College of Materials Science and Engineering, Sichuan University, 610065, Chengdu, People’s Republic of China;Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark;State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, 710072, Xi’an, People’s Republic of China;

关键词: Wafer-scale growth;    Molybdenum disulfide;    Gas deposition;    Integrated circuits;   

DOI  :  10.1007/s40820-022-01010-4

 received in 2022-10-25, accepted in 2022-12-14,  发布年份 2022

来源: Springer

【 摘 要 】

tsThis review summarized the state of the art of MoS2 from their controllable growth and potential application in integrated circuit.The influence of promoter, substrate, pressure, catalyst and precursor on the nucleation and growth are discussed.The current challenges and future perspectives of wafer-scale MoS2 are outlined from the materials and device applications.

【 授权许可】

CC BY   
© The Author(s) 2023

【 图 表 】

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