A Au/CuNiCoS 4 /p-Si photodiode: electrical and morphological characterization

Beilstein Journal of Nanotechnology

article

Adem Koçyiğit¹  Adem Sarılmaz³  Teoman Öztürk⁴  Faruk Ozel³  Murat Yıldırım⁶ 

[1] Department of Electrical Electronic Engineering, Engineering Faculty, Igdir University;Department of Electronics and Automation, Vocational High School, Bilecik Şeyh Edebali University;Department of Metallurgical and Materials Engineering, Faculty of Engineering, Karamanoğlu Mehmetbey University;Department of Physics, Faculty of Science, Selcuk University;Scientific and Technological Research and Application Center, Karamanoglu Mehmetbey University;Department of Biotechnology, Faculty of Science, Selcuk University

关键词: Au/CuNiCoS4/p-Si device;    CuNiCoS4;    optoelectronic applications;    Schottky devices;   

DOI  :  10.3762/bjnano.12.74

学科分类：环境监测和分析

来源: Beilstein - Institut zur Foerderung der Chemischen Wissenschaften

【 摘 要 】

In this present work, CuNiCoS4 thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). TheXRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS4. The obtained CuNiCoS4 thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I–V andC–V characteristics. The fabricated Au/CuNiCoS4/p-Si device exhibited good rectifying properties, high photoresponse activity,low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS4 thiospinel nanocrystals can be employed inhigh-efficiency optoelectronic applications.

【 授权许可】

CC BY