Graphene/AlGaN/GaN RF Switch

Micromachines

Aleksandra Przewłoka¹  Pavlo Sai¹  Maksym Dub¹  Wojciech Knap¹  Sergey Rumyantsev¹  Grzegorz Cywiński¹  Aleksandra Krajewska¹  Paweł Prystawko²  Jakub Sobolewski³  Yevhen Yashchyshyn³  Paweł Bajurko³ 

[1] CENTERA Laboratories, Institute of High Pressure Physics PAS, 01-142 Warsaw, Poland;Institute of High Pressure Physics PAS, 01-142 Warsaw, Poland;Institute of Radioelectronics and Multimedia Technology, Warsaw University of Technology, 00-665 Warsaw, Poland;

关键词: AlGaN/GaN;    graphene;    switches;    two-dimensional high-density electron gas;    millimeter-wave devices;   

DOI  :  10.3390/mi12111343

来源: DOAJ

【 摘 要 】

RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and other technologies and avoiding the matching problems. The on-state insertion losses for the designed switches were measured to range from 7.4 to 19.4 dB, depending on the frequency and switch design. Although, at frequencies above 70 GHz, the switches were less effective, the switching effect was still evident with an approximately 4 dB on–off ratio. The best switches exhibited rise and fall switching times of ~25 ns and ~17 ns, respectively. The use of such a switch can provide up to 20 MHz of bandwidth in time-modulated systems, which is an outstanding result for such systems. The proposed equivalent circuit describes well the switching characteristics and can be used to design switches with required parameters.

【 授权许可】

Unknown