Incorporation of ZnO Nanostructures in MIS Architecture through Chemical Routes

Proceedings

Rubén J. Aranda García¹  A. Escobedo Morales¹  J. Carrillo López²  José Alberto Luna López²  M. Dominguez Jimenez²  N. Carlos Ramírez³ 

[1] Facultad de Ingeniería Química, Benemérita Universidad Autónoma de Puebla, 5013 Puebla, Pue., Mexico;IC-CIDS Benemérita Universidad Autónoma de Puebla, Ed. IC5 o IC6, Col. San Manuel, C.P. 72570 Puebla, Pue., Mexico;INAOE, Electronics Department, Apartado 51, 72000 Puebla, Mexico;

关键词: ZnO;    SEM;    morphology;    XRD;    MIS;   

DOI  :  10.3390/proceedings1040308

来源: DOAJ

【 摘 要 】

Because it’s physical properties, ZnO is considered a potential semiconductor compound for fabricating electronic and optoelectronic functional devices. In this regard, several growth techniques have been developed in order to meet the requirements of commercial devices based in this material. On the pathway for improving the performance of the current devices, low-dimensional ZnO structures seem a promising alternative. Here, we report the process to obtain a metal-insulator-semiconductor (MIS) structure based on ZnO nanostructures grown on the surface of an anodized aluminum substrate (Al2O3/Al) by chemical routes.

【 授权许可】

Unknown