Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

Materials

SergioI. Molina¹  María de la Mata¹  Arántzazu Núñez-Cascajero²  FernandoB. Naranjo² 

[1] Departamento de Ciencias de los Materiales e Ingeniería Metalúrgica y Química Inorganica, Universidad de Cádiz, IMEYMAT, 11510 Cádiz, Spain;Departamento de Electrónica, Universidad de Alcalá, GRIFO, 28871 Alcalá de Henares, Spain;

关键词: III-nitrides;    AlInN;    AlN buffer;    RF sputtering;    TEM;   

DOI  :  10.3390/ma14092236

来源: DOAJ

【 摘 要 】

Compact Al_0.37In_0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.

【 授权许可】

Unknown