Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Nanomaterials

Kuankuan Lu¹  Rihui Yao¹  Honglong Ning¹  Junbiao Peng¹  Shiben Hu²  Zhangxu Pan²  Jiantai Wang²  Yanfen Gong²  Chao Pang²  Chan Guo²  Zheng Gong² 

[1] Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China;Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China;

关键词: oxide semiconductor;    a-IGZO;    TFT;    X-ray reflectivity;    microwave photoconductivity decay;   

DOI  :  10.3390/nano11020522

来源: DOAJ

【 摘 要 】

In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O${}_2$/(Ar+O${}_2$) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay ($\mu$-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm${}^2$/Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec.

【 授权许可】

Unknown