Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition

Journal of Advanced Dielectrics

Liyan Dai¹  Gang Niu¹  Zhiyong Quan²  Yuxin An²  Ying Wu³  Yanfei Zhao³  Zhengcheng Li³  Sunan Ding³  Biao Wu³  Jinping Zhang³  Tong Liu³  Hui Hao³ 

[1] Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information, Xi’an Jiaotong University, Xi’an 710049, P. R. China;Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, P. R. China;Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China;

关键词: Oxide semiconductor;    β-Ga2O3 epitaxy;    optical transmission spectrum;    pulsed laser deposition;    crystal growth;   

DOI  :  10.1142/S2010135X19500322

来源: DOAJ

【 摘 要 】

In this work, we have successfully grown high quality epitaxial β-Ga2O3 thin films on β-Ga2O3 (100) and Al2O3(0001) substrates using pulsed laser deposition (PLD). By optimizing temperature and oxygen pressure, the best conditions were found to be 650–700∘C and 0.5Pa. To further improve the quality of hetero-epitaxial β-Ga2O3, the sapphire substrates were pretreated for atomic terraced surface by chemical cleaning and high temperature annealing. From the optical transmittance measurements, the films grown at 600–750∘C exhibit a clear absorption edge at deep ultraviolet region around 250–275nm wavelength. High resolution transmission electron microscope (HRTEM) images and X-ray diffraction (XRD) patterns demonstrate that β-Ga2O3(-201)//Al2O3(0001) epitaxial texture dominated the epitaxial oxide films on sapphire substrate, which opens up the possibilities of high power electric devices.

【 授权许可】

Unknown