SnO2-Pd as a Gate Material for the Capacitor Type Gas Sensor

Proceedings

Maya Etrekova¹  Nikolay Samotaev¹  Konstantin Oblov¹  Arthur Litvinov¹ 

[1] National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe higway 31, Moscow 115409, Russia;

关键词: field-effect sensor;    metal oxide sensor;    gas sensitivity;   

DOI  :  10.3390/proceedings2019014010

来源: DOAJ

【 摘 要 】

The article describes the result of the use SnO₂-Pd thin films as a gate for structure measured ppb range of NO₂ gas by the capacitive method. The technological aspects of fabrication SnO₂-Pd gate and one comparison by metrological parameters with the classical Pd gate field effect sensor are discussed. The use of SnO₂-Pd material allows improvement in sensitivity of NO₂ by an order of magnitude compare the classical Pd based gate field effect sensors.

【 授权许可】

Unknown