Biomolecular control over local gating in bilayer graphene induced by ferritin

iScience

Rupali Reddy Pasula¹  Wentao Xu²  Jens Martin³  Sierin Lim³  Senthil Kumar Karuppannan⁴  Christian A. Nijhuis⁵ 

[1] Corresponding author;Department of Physics, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore;Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore;Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore;School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore 637457, Singapore;

关键词: Biochemistry;    Materials science;    Nanomaterials;   

DOI  :  

来源: DOAJ

【 摘 要 】

Summary: Electrical field-induced charge modulation in graphene-based devices at the nanoscale with ultrahigh density carrier accumulation is important for various practical applications. In bilayer graphene (BLG), inversion symmetry can simply be broken by an external electric field. However, control over charge carrier density at the nanometer scale is a challenging task. We demonstrate local gating of BLG in the nanometer range by adsorption of AfFtnAA (which is a bioengineered ferritin, an iron-storing globular protein with ∅ = 12 nm). Low-temperature electrical transport measurements with field-effect transistors with these AfFtnAA/BLG surfaces show hysteresis with two Dirac peaks. One peak at a gate voltage VBG = 35 V is associated with pristine BLG, while the second peak at VBG = 5 V results from local doping by ferritin. This charge trapping at the biomolecular length scale offers a straightforward and non-destructive method to alter the local electronic structure of BLG.

【 授权许可】

Unknown