III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

Crystals

KelseyA. W. Horowitz¹  KevinL. Schulte¹  AaronJ. Ptak¹  Timothy Remo¹  John Simon¹  DavidL. Young¹ 

[1] National Renewable Energy Laboratory, Golden, CO 80401, USA;

关键词: HVPE;    III-V semiconductors;   

DOI  :  10.3390/cryst9010003

来源: DOAJ

【 摘 要 】

Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.

【 授权许可】

Unknown