Ultra-Low-Power FinFETs-Based TPCA-PUF Circuit for Secure IoT Devices

Sensors

Yasuhiro Takahashi¹  Cancio Monteiro² 

[1] Department of Electrical, Electronic and Computer Engineering, Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu-shi 501-1193, Japan;Department of Electronics and Electrical Engineering (EEE), Faculty of Engineering, Science and Technology, Universidade Nacional Timor Lorosa’e (UNTL), Avenida Hera, Cristo-Rei, Dili 314, Timor-Leste;

关键词: physical unclonable function (PUF);    secure keys;    FinFETs;    low power;    adiabatic;    reliable and unique identity;   

DOI  :  10.3390/s21248302

来源: DOAJ

【 摘 要 】

Low-power and secure crypto-devices are in crucial demand for the current emerging technology of the Internet of Things (IoT). In nanometer CMOS technology, the static and dynamic power consumptions are in a very critical challenge. Therefore, the FinFETs is an alternative technology due to its superior attributes of non-leakage power, intra-die variability, low-voltage operation, and lower retention voltage of SRAMs. In this study, our previous work on CMOS two-phase clocking adiabatic physical unclonable function (TPCA-PUF) is evaluated in a FinFET device with a 4-bits PUF circuit complexity. The TPCA-PUF-based shorted-gate (SG) and independent-gate (IG) modes of FinFETs are investigated under various ambient temperatures, process variations, and ±20% of supply voltage variations. To validate the proposed TPCA-PUF circuit, the QUALPFU-based Fin-FETs are compared in terms of cyclical energy dissipation, the security metrics of the uniqueness, the reliability, and the bit-error-rate (BER). The proposed TPCA-PUF is simulated using 45 nm process technology with a supply voltage of 1 V. The uniqueness, reliability, and the BER of the proposed TPCA-PUF are 50.13%, 99.57%, and 0.43%, respectively. In addition, it requires a start-up power of 18.32 nW and consumes energy of 2.3 fJ/bit/cycle at the reference temperature of 27 °C.

【 授权许可】

Unknown