Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs

IEEE Journal of the Electron Devices Society

Jin Jang¹  Younwoo Choe¹  Mallory Mativenga¹  Haeyeon Jun¹  Jae Gwang Um¹ 

[1] Department of Information Display, Advanced Display Research Center, Kyung Hee University, Seoul, South Korea;

关键词: Circular;    Corbino;    flexible;    IGZO;    strain;    TFT;   

DOI  :  10.1109/JEDS.2017.2751651

来源: DOAJ

【 摘 要 】

We employ a circular (Corbino) thin-film transistor (TFT) structure, in which the outer-ring is the drain and the inner-ring is the source, to improve the stability of amorphous-indium-gallium- zinc-oxide TFTs under tensile bending strain. We attribute the stability improvement to a more uniform electric field distribution across the circular channel, as it is isolated from local electric field crowding at sharp corners or channel edges. In addition, the effect of strain-induced increase in channel charge concentration is small in Corbino TFTs, owing to the larger outer-ring electrode, which depletes more electrons than the drain of rectangular TFTs. Furthermore, the circular shape results in bending direction independence, which is very important in multi-TFT circuits, where TFT orientation varies with position.

【 授权许可】

Unknown