High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes

Deng, Xunming¹  Fan, Qi Hua 

[1] University of Toledo

关键词: photovoltaic;    thin film silicon;    triple-junction;    flexible;   

DOI  :  10.2172/1132817
RP-ID  :  Final Technical Report
PID  :  OSTI ID: 1132817

学科分类：再生能源与代替技术

美国|英语

来源: SciTech Connect

【 摘 要 】

The University of Toledo (UT), working in concert with it???s a-Si-based PV industry partner Xunlight Corporation (Xunlight), has conducted a comprehensive study to develop a large-area (3ft x 3ft) VHF PECVD system for high rate uniform fabrication of silicon absorber layers, and the large-area VHF PECVD processes to achieve high performance a-Si/a-SiGe or a-Si/nc-Si tandem junction solar cells during the period of July 1, 2008 to Dec. 31, 2011, under DOE Award No. DE-FG36-08GO18073. The project had two primary goals: (i) to develop and improve a large area (3 ft ?? 3 ft) VHF PECVD system for high rate fabrication of > = 8 ??/s a-Si and >= 20 ??/s nc-Si or 4 ??/s a-SiGe absorber layers with high uniformity in film thicknesses and in material structures. (ii) to develop and optimize the large-area VHF PECVD processes to achieve high-performance a-Si/nc-Si or a-Si/a-SiGe tandem-junction solar cells with >= 10% stable efficiency. Our work has met the goals and is summarized in ???Accomplishments versus goals and objectives???.