Fabrication of In(P)As Quantum Dots by Interdiffusion of P and As on InP(311)B Substrate

Crystals

Kouichi Akahane¹  Toshimasa Umezawa¹  Atsushi Matsumoto¹  Naokatsu Yamamoto¹ 

[1] National Institute of Information and Communications Technology (NICT) 4-2-1 Nukuikitamachi, Koganei, Tokyo 184-8795, Japan;

关键词: nanostructures;    diffusion;    desorption;    atomic force microscopy;    molecular beam epitaxy;    semiconducting iii-v materials;   

DOI  :  10.3390/cryst10020090

来源: DOAJ

【 摘 要 】

Herein, we report on our investigation of a fabrication scheme for self-assembled quantum dots (QDs), which is another type of Stranski−Krastanow (S−K) growth mode. The In(P)As QD structure was formed by the irradiation of As flux on an InP(311)B surface in a molecular beam epitaxy system controlled by substrate temperature and irradiation duration. These QDs show photoluminescence at around 1500 nm, which is suitable for fiber optic communication systems. The QDs formed by this structure had high As composition because they had size, density, and emission wavelength similar to those of QDs grown by the usual S−K growth mode.

【 授权许可】

Unknown