Probing Electronic Strain Generation by Separated Electron-Hole Pairs Using Time-Resolved X-ray Scattering

Applied Sciences

AnthonyD. DiChiara¹  Wonhyuk Jo²  YongChan Cho²  Sooheyong Lee²  EricC. Landahl³  TimothyP. Holmes³  Stephen Santowski³ 

[1] Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, USA;Korea Research Institute of Standards and Science, Daejeon 305-340, Korea;Physics Department, DePaul University, Chicago, IL 60614, USA;

关键词: deformation potential;    electronic strain;    gallium arsenide;    time-resolved x-ray scattering;    thermal transport;   

DOI  :  10.3390/app9224788

来源: DOAJ

【 摘 要 】

Photogeneration of excess charge carriers in semiconductors produces electronic strain. Under transient conditions, electron-hole pairs may be separated across a potential barrier. Using time-resolved X-ray diffraction measurements across an intrinsic AlGaAs/n-doped GaAs interface, we find that the electronic strain is only produced by holes, and that electrons are not directly observable by strain measurements. The presence of photoinduced charge carriers in the n-doped GaAs is indirectly confirmed by delayed heat generation via recombination.

【 授权许可】

Unknown