Estimation of various scattering parameters and 2-DEG mobilities from electron mobility calculations in the three conduction bands 𝛤, L and X of gallium arsenide

Pramana

A K Saxena1¹  Sonal Singhal¹  S Dasgupta¹ 

[1]Solid State Devices and VLSI Technology Group, Department of Electronics and Computer Engineering, Indian Institute of Technology Roorkee, Roorkee 247 667, India$$

关键词: GaAs;    scattering;    mobilities in 𝛤;    L and X valleys;    effective masses;    deformation potential;    impurity compensation and 2-DEG.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

The electron drift mobility in 𝛤 conduction band of GaAs has been calculated before, but for the first time, we have made attempts to estimate the electron mobilities in higher energy L and X minima. We have also calculated the value of mobility of two-dimensional electron gas needed to predict hetero-structure device characteristics using GaAs. Best scattering parameters have been derived by close comparison between experimental and theoretical mobilities. Room temperature electron mobilities in 𝛤, L and X valleys are found to be nearly 9094, 945 and 247 cm2 /V-s respectively. For the above valleys, the electron masses, deformation potentials and polar phonon temperatures have been determined to be (0.067, 0.22, 0.39m 0 ), (8.5, 9.5, 6.5 eV), and (416, 382, 542 K) as best values, respectively. The 2-DEG electron mobility in 𝛤 minimum increases to 1.54 × 106 from 1.59 × 105 cm2 /V-s (for impurity concentration of 1014 cm-3) at 10 K. Similarly, the 2-DEG electron mobility values in L and X minima are estimated to be 2.28 × 105 and 1.44 × 105 cm2 /V-s at 10 K, which are about ∼ 4.5 and ∼ 3.9 times higher than normal value with impurity scattering present.

【 授权许可】

Unknown