Accurately Modeling of Zero Biased Schottky-Diodes at Millimeter-Wave Frequencies

Electronics

Antonio Tazón¹  Tomás Fernández¹  JuanPablo Pascual¹  Jéssica Gutiérrez²  Kaoutar Zeljami³ 

[1] Department of Communications Engineering, Laboratorios de Ingenieria de Telecomunicación Profesor José Luis García García, University of Cantabria, Plaza de la Ciencia, 39005 S/N Santander, Spain;Erzia Technologies, C/Josefina de la Maza 4 - 2°, 39012 Santander, Spain;Information and Telecommunication Systems Laboratory, Université Abdelmalek Essaâdi, Tetouan 2117, Morocco;

关键词: W band;    Schottky Diode Detectors;    ZBD modeling;    wire bonding;    flip-chip;   

DOI  :  10.3390/electronics8060696

来源: DOAJ

【 摘 要 】

This paper presents and discusses the careful modeling of a Zero Biased Diode, including low-frequency noise sources, providing a global model compatible with both wire bonding and flip-chip attachment techniques. The model is intended to cover from DC up to W-band behavior, and is based on DC, capacitance versus voltage, as well as scattering and power sweep harmonics measurements. Intensive use of 3D EM (ElectroMagnetic) simulation tools, such as HFSS^TM, was done to support Zero Biased Diode parasitics modeling and microstrip board modeling. Measurements are compared with simulations and discussed. The models will provide useful support for detector designs in the W-band.

【 授权许可】

Unknown