Ceramics-Silikáty | |
THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS | |
Peter Hornak1  KianicovaMarta1  RehakFrantisek1  PekarcikovaMiriam2  CiznarPeter2  KaczmarekLukasz2  BalkoJan2  Daniel Kottfer2  | |
[1] Alexander Dubcek University of Trencin, Faculty of Industrial Technologies, I. Krasku 491/30, 020 01 Puchov, Slovak Republic ;; | |
关键词: WC/C layer; DC magnetron sputtering; N₂+SiH₄; Annealing; Properties; | |
DOI : 10.13168/cs.2018.0001 | |
来源: DOAJ |
【 摘 要 】
Tungsten carbide (WC/C) layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT), indentation modulus (EIT) and coefficient of friction (COF) values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.
【 授权许可】
Unknown