Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes

Crystals

Ivana Capan¹  Tomislav Brodar¹  Yuya Oki²  Takahiro Makino²  Yuichi Yamazaki²  Takeshi Ohshima² 

[1] Ruđer Bošković Institute, Bijenička 54, 10 000 Zagreb, Croatia;Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370–1292, Japan;

关键词: minority traps;    defects;    silicon carbide;    MCTS;    SBD;   

DOI  :  10.3390/cryst9070328

来源: DOAJ

【 摘 要 】

We present preliminary results on minority carrier traps in as-grown n-type 4H−SiC Schottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investigated by means of minority carrier transient spectroscopy (MCTS) and high-resolution Laplace-MCTS measurements. A single minority carrier trap with its energy level position at E_v + 0.28 eV was detected and assigned to boron-related defects.

【 授权许可】

Unknown