High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal Synthesis

Nanomaterials

ByungJin Cho¹  HyunJeong Bae²  TaeHee Yoo²  Youngbin Yoon²  InGyu Lee²  JongPil Kim³  WanSik Hwang⁴ 

[1] Research, Korea Basic Science Institute, Busan 46742, Korea;Department of Materials Engineering, Korea Aerospace University, Goyang 10540, Korea;;Division of Analysis &School of Electrical Engineering, KAIST, Daejeon 34141, Korea;

关键词: low dimensional structures;    hydrothermal crystal growth;    nanomaterials;    Ga2O3;    nanorods;   

DOI  :  10.3390/nano8080594

来源: DOAJ

【 摘 要 】

High-aspect ratio β-Ga2O3 nanorods consisting of prism-like crystals were formed using gallium oxyhydroxide and ammonia hydroxide via a hydrothermal synthesis followed by the subsequent calcination process. The formation of high-aspect ratio β-Ga2O3 nanorods was attributed to the oriented attachment mechanism that was present during the hydrothermal synthesis. A field-effect transistor was fabricated using the high-aspect ratio β-Ga2O3 nanorod, and it exhibited the typical charge transfer properties of an n-type semiconductor. This facile approach to forming high-aspect ratio nanorods without any surfactants or additives can broaden the science of β-Ga2O3 and expedite the integration of one-dimensional β-Ga2O3 into future electronics, sensors, and optoelectronics.

【 授权许可】

Unknown