Heavy-Ion Radiation Characteristics of DDR2 Synchronous Dynamic Random Access Memory Fabricated in 56 nm Technology

Journal of Astronomy and Space Sciences

Yukio Uchihori¹  Hisashi Kitamura¹  Takeshi Takashima²  Mi-Young Park³  Jang-Soo Chae³  Kwangsun Ryu³  In Lee³ 

[1] Heavy Ion Medical Accelerator in Chiba, National Institute of Radiological Sciences, Chiba 263-8555, Japan;Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara 229-8510, Japan;Satellite Technology Research Center, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea;

关键词: radiation effects;    radiation hardening;    synchronous dynamic random access memory;   

DOI  :  10.5140/JASS.2012.29.3.315

来源: DOAJ

【 摘 要 】

We developed a mass-memory chip by staking 1 Gbit double data rate 2 (DDR2) synchronous dynamic random access memory (SDRAM) memory core up to 4 Gbit storage for future satellite missions which require large storage for data collected during the mission execution. To investigate the resistance of the chip to the space radiation environment, we have performed heavy-ion-driven single event experiments using Heavy Ion Medical Accelerator in Chiba medium energy beam line. The radiation characteristics are presented for the DDR2 SDRAM (K4T1G164QE) fabricated in 56 nm technology. The statistical analyses and comparisons of the characteristics of chips fabricated with previous technologies are presented. The cross-section values for various single event categories were derived up to ~80 MeVcm2/mg. Our comparison of the DDR2 SDRAM, which was fabricated in 56 nm technology node, with previous technologies, implies that the increased degree of integration causes the memory chip to become vulnerable to single-event functional interrupt, but resistant to single-event latch-up.

【 授权许可】

Unknown