Reducing Afterpulsing in InGaAs(P) Single-Photon Detectors with Hybrid Quenching

Sensors

Yining Xu¹  Xian Zhao¹  Yongfu Li¹  Yi Gu²  Zheng Wang³  Junliang Liu³  Zhaojun Liu³ 

[1] Key Laboratory of Education Ministry for Laser and Infrared System Integration Technology, Shandong University, 72 Binhai Road, Qingdao 266237, China;Key Laboratory of Infrared Detection and Imaging Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China;School of Information Science and Engineering, Shandong University, 72 Binhai Road, Qingdao 266237, China;

关键词: single-photon detectors;    single-photon avalanche diodes;    avalanche photodiodes;    quenching circuits;   

DOI  :  10.3390/s20164384

来源: DOAJ

【 摘 要 】

High detection efficiency appears to be associated with a high afterpulse probability for InP-based single-photon avalanche diodes. In this paper, we present a new hybrid quenching technique that combines the advantages of both fast active quenching and high-frequency gated-passive quenching, with the aim of suppressing higher-order afterpulsing effects. Our results showed that the hybrid quenching method contributed to a 10% to 85% reduction of afterpulses with a gate-free detection efficiency of 4% to 10% at 1.06 $\mathsf{\mu }$m, with 40 ns dead time, compared with the counter-based hold-off method. With the improvement of the afterpulsing performance of high-frequency gated single-photon detectors, especially at relatively high average detection efficiencies with wide gate widths, the proposed method enables their use as high-performance free-running detectors.

【 授权许可】

Unknown