High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

Nanoscale Research Letters

Kar Seng Teng¹  Shu Ping Lau²  Libin Tang³  Menghan Jia⁴  Fang Wang⁴  Jinzhong Xiang⁵ 

[1] College of Engineering, Swansea University;Department of Applied Physics, The Hong Kong Polytechnic University;Kunming Institute of Physics;School of Materials Science and Engineering, Yunnan University;School of Physics and Astronomy, Yunnan University;

关键词: β-Ga2O3;    NiO;    Heterojunction;    UV photodetector;   

DOI  :  10.1186/s11671-020-3271-9

来源: DOAJ

【 摘 要 】

Abstract Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ( 2¯ $$ \overline{2} $$ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW−1 under a 245-nm illumination (27 μWcm−2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W−1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction.

【 授权许可】

Unknown