Transient thermal characterization of β -Ga 2 O 3 Schottky barrier diodes

IEICE Electronics Express

article

Shota Seki¹  Tsuyoshi Funaki¹  Jun Arima²  Minoru Fujita²  Jun Hirabayashi²  Kazuyoshi Hanabusa² 

[1] Dept. of Electrical Engineering, Osaka University;TDK Corporation

关键词: β-Ga2O3;    SBD;    thermal resistance;    wide-band;    MOS trench;    parameter extraction;   

DOI  :  10.1587/elex.19.20210558

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

This paper studies transient thermal characteristics of β-Ga2O3 Schottky barrier diode (SBD) packaged in TO-220. Planar and metal-oxide-semiconductor (MOS) trench anode types are evaluated. Junction temperature is estimated from temperature dependency of forward conduction characteristics in measuring SBD transient thermal characteristics. This paper confirms the completeness of processed Schottky junction on β-Ga2O3 with extracted diode ideal factor and Schottky barrier height of SBDs. The measured transient thermal characteristics of developed β-Ga2O3 SBDs are proved to have higher thermal resistance compared to commercially available SiC SBD and left much to be improved.

【 授权许可】

CC BY