Compact Modeling of Multi-Layered MoS2 FETs Including Negative Capacitance Effect

IEEE Journal of the Electron Devices Society

Yogesh S. Chauhan¹  Keshari Nandan¹  Priyank Rastogi¹  Chandan Yadav²  Enrique G. Marin³  Alejandro Toral-Lopez³  Francisco G. Ruiz³  Antonio Marin-Sanchez³  Somnath Bhowmick⁴ 

[1] Department of Electrical Engineering, NanoLab, Indian Institute of Technology Kanpur, Kanpur, India;Department of Electronics and Communication Engineering, National Institute of Technology Calicut, Calicut, India;Department of Electronics, University of Granada, Granada, Spain;Department of Material Science and Engineering, Indian Institute of Technology Kanpur, Kanpur, India;

关键词: Metal-oxide-semiconductor field-effect transistor (MOSFET);    compact modeling;    molybdenum disulfide (MoS₂);    transition metal dichalcogenide (TMD);    double gate (DG);    negative capacitance FET (NCFET);   

DOI  :  10.1109/JEDS.2020.3021031

来源: DOAJ

【 摘 要 】

In this article, we present a channel thickness dependent analytical model for MoS₂ symmetric double-gate FETs including negative capacitance (NC) effect. In the model development, first thickness dependent model of the baseline 2D FET is developed, and later NC effect is included in the model using the Landau-Khalatnikov (L-K) relation. To validate baseline model behavior, density functional theory (DFT) calculations are taken into account to obtain numerical data for the K and Λ valley dependent effective masses and differences in the energy levels of N-layer (N = 1, 2, 3, 4, and 5) MoS₂. The calculated layer dependent parameters using DFT theory are further used in a drift-diffusion simulator to obtain electric characteristics of the baseline 2D FET for model validation. The model shows excellent match for drain current and total gate capacitance of baseline FET and NCFET against the numerical simulation.

【 授权许可】

Unknown