Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi

Nanoscale Research Letters

Tao Zhang¹  Shanjun Li¹  Shumin Wang²  Dan Liang³  Yang Li³  Pengfei Lu³  Pengfei Zhu³  Lihong Han³ 

[1] College of Electrical Engineering and Information Technology, Sichuan University;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences;State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications;

关键词: Quaternary;    InGaNBi;    First-principles;    Electronic;    Strain;   

DOI  :  10.1186/s11671-019-2968-0

来源: DOAJ

【 摘 要 】

Abstract To realize feasible band structure engineering and hence enhanced luminescence efficiency, InGaNBi is an attractive alloy which may be exploited in photonic devices of visible light and mid-infrared. In present study, the structural, electronic properties such as bandgap, spin-orbit splitting energy, and substrate strain of InGaNBi versus In and Bi compositions are studied by using first-principles calculations. The lattice parameters increase almost linearly with increasing In and Bi compositions. By bismuth doping, the quaternary InGaNBi bandgap could cover a wide energy range from 3.273 to 0.651 eV for Bi up to 9.375% and In up to 50%, corresponding to the wavelength range from 0.38-1.9 µm. The calculated spin-orbit splitting energy are about 0.220 eV for 3.125%, 0.360 eV for 6.25%, and 0.600 eV for 9.375% Bi, respectively. We have also shown the strain of InGaNBi on GaN; it indicates that through adjusting In and Bi compositions, InGaNBi can be designed on GaN with an acceptable strain.

【 授权许可】

Unknown