Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

IEEE Journal of the Electron Devices Society

Y. Miyaoku¹  H. J. Mattausch¹  A. Tone¹  M. Miura-Mattausch¹  K. Matsuura¹  D. Ikoma² 

[1] Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Japan;Sensor and Semiconductor Development, Denso Corporation, Aichi, Japan;

关键词: IGBT;    switching characteristics;    potential distribution;    overlap capacitance;    charging/discharging;    compact model;   

DOI  :  10.1109/JEDS.2020.3008919

来源: DOAJ

【 摘 要 】

The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the power dissipation of IGBT circuits has been analyzed. The main focus is given on the carrier dynamics within the IGBTs during the switching-off phase. It is demonstrated that discharging and charging at the IGBT's gate-bottom-overlap region, where electron discharging is followed by hole charging, has an important influence on the switching performance. In particular, the comparison of long-base and short-base IGBTs reveals, that a quicker formation of the neutral region within the resistive base region, as occurring in the long-base IGBT, leads to lower gate-bottom-overlap capacitance, thus realizing faster electron discharging and hole charging of this overlap region.

【 授权许可】

Unknown