Switching characteristics of a diamond Schottky barrier diode

IEICE Electronics Express

Hitoshi Umezawa²  Tsuyoshi Funaki¹  Kazuya Kodama¹  Shinichi Shikata² 

[1] Osaka University, Div. of Electrical, Electronic and Information Eng. Graduate school of Engineering;Diamond Res. Lab, National Inst. of Advanced Industrial Sci.

关键词: diamond Schottky barrier diode;    switching characteristics;    diamond semiconductor;   

DOI  :  10.1587/elex.7.1246

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(6)Cited-By(11)The static current-voltage (I-V) characteristics of a diamond Schottky barrier diode (SBD) have been previously studied. This paper experimentally studies the switching characteristics of a diamond SBD in comparison with the characteristics of a silicon carbide (SiC) SBD. The forward conduction current and the reverse bias voltage dependency of the reverse recovery phenomenon during the fast-switching operation of an SBD are evaluated. The experimental results validate the majority carrier device characteristics of the diamond SBD under study. The results indicate the feasibility of using a diamond device in a power conversion circuit.

【 授权许可】

Unknown