Indication of Strongly Correlated Electron Transport and Mott Insulator in Disordered Multilayer Ferritin Structures (DMFS)

Materials

Christopher Rourk¹  Cai Shen²  Yunbo Huang²  Minjing Chen² 

[1] Independent Researcher, Dallas, TX 75205, USA;Ningbo Institute of Materials Technology & Engineering Chinese Academy of Sciences, 1219 Zhongguan Road, Zhenhai District, Ningbo 315201, China;

关键词: ferritin;    quantum dots;    layer-by-layer deposition;    conductive atomic force microscopy;    strong correlations;   

DOI  :  10.3390/ma14164527

来源: DOAJ

【 摘 要 】

Electron tunneling in ferritin and between ferritin cores (a transition metal (iron) oxide storage protein) in disordered arrays has been extensively documented, but the electrical behavior of those structures in circuits with more than two electrodes has not been studied. Tests of devices using a layer-by-layer deposition process for forming multilayer arrays of ferritin that have been previously reported indicate that strongly correlated electron transport is occurring, consistent with models of electron transport in quantum dots. Strongly correlated electrons (electrons that engage in strong electron-electron interactions) have been observed in transition metal oxides and quantum dots and can create unusual material behavior that is difficult to model, such as switching between a low resistance metal state and a high resistance Mott insulator state. This paper reports the results of the effect of various degrees of structural homogeneity on the electrical characteristics of these ferritin arrays. These results demonstrate for the first time that these structures can provide a switching function associated with the circuit that they are contained within, consistent with the observed behavior of strongly correlated electrons and Mott insulators.

【 授权许可】

Unknown