A Physic-Based Explicit Compact Model for Reconfigurable Field-Effect Transistor

IEEE Access

Bairun Huang¹  Wangze Ni¹  Zhuojun Chen¹  Zhen Dong¹  Yichi Zhang¹ 

[1] School of Physics and Electronics, Hunan University, Changsha, China;

关键词: Reconfigurable field-effect transistor;    analytical model;    surface potential;    drain current;    Verilog-A;   

DOI  :  10.1109/ACCESS.2021.3064961

来源: DOAJ

【 摘 要 】

In this paper, a compact model for the double-gate Reconfigurable Field-Effect Transistor (RFET) is presented. Firstly, the physics-based surface potential model is derived by solving Poisson’s equation at different channel regions. Then an explicit expression of drain current is analytically obtained based on the theory of band-to-band tunneling at the Schottky junction. The proposed model shows excellent agreement with TCAD simulations which have been calibrated with experimental data. Finally, the compactible model is implemented in Verilog-A language without convergence problem, and proven by the RFET-based logic circuit.

【 授权许可】

Unknown