Threshold Switching of Ag-Ga2Te3 Selector with High Endurance for Applications to Cross-Point Arrays

Nanoscale Research Letters

Minkyu Kang¹  Jimin Lee¹  Jaeyeon Kim¹  Hyunchul Sohn¹ 

[1]Department of Materials Science and Engineering, Yonsei University

关键词: Thin films;    Vapor deposition;    Diffusion;    Electronic properties;    TEM;   

DOI  :  10.1186/s11671-021-03585-0

来源: DOAJ

【 摘 要 】

Abstract Threshold switching in chalcogenides has attracted considerable attention because of their potential application to high-density and three-dimensional stackable cross-point array structures. However, despite their excellent threshold switching characteristics, the selectivity and endurance characteristics of such selectors should be improved for practical application. In this study, the effect of Ag on the threshold switching behavior of a Ga2Te3 selector was investigated in terms of selectivity and endurance. The Ag-Ga2Te3 selector exhibited a high selectivity of 108 with low off-state current of < 100 fA, steep turn-on slope of 0.19 mV/dec, and high endurance of 109 cycles. The transient response was verified to depend on the pulse input voltage and measurement temperature. Considering its excellent threshold switching characteristics, the Ag-Ga2Te3 selector is a promising candidate for applications in cross-point array structures.

【 授权许可】

Unknown