Perovskite Bi0.5Na0.5TiO3-based materials for dielectric capacitors with ultrahigh thermal stability

Materials & Design

Hangfeng Zhang¹  Amit Mahajan²  Dou Zhang³  Nan Meng⁴  Zhipeng Gao⁴  Jiyue Wu⁴  Vladimir Koval⁵  Haixue Yan⁶ 

[1] Department of Materials Science, Fudan University, Shanghai 200433, China;Institute of Materials Research, Slovak Academy of Sciences, Watsonova 47, Kosice 04001, Slovakia;Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang, Sichuan 621010, China;School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, UK;State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China;State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083, China;

关键词: Capacitors;    Dielectric;    Relaxor ferroelectric;    Polar nano regions;    Thermal stability;   

DOI  :  

来源: DOAJ

【 摘 要 】

There has been recently a great progress in the development of dielectric capacitors for high temperature electronic applications. The design of lead-free ceramics with high dielectric permittivity, low dielectric loss and a limited variation of these parameters over a wide temperature range is still a big challenge. In this work, lead-free Bi0.35Na0.65–0.5xRb0.5xTi0.7Nb0.3O3 (x = 0–0.05) bulk ceramics were prepared using the solid-state reaction method. Upon Rb substitution, the variation of the dielectric permittivity was reduced substantially, in particular, at high temperature (over 200 °C). In addition, a low temperature coefficient of capacitance (TCC ≤ 10%) together with an ultra-low dielectric loss (tanδ ≤ 0.05) were achieved for the Bi0.35Na0.63Rb0.02Ti0.7Nb0.3O3 sample in the temperature range from −43 °C to 292 °C. The new relaxor-type ferroelectrics also possess the outstanding stability of the dielectric properties under high DC bias voltage, which makes them promising materials for high-performance capacitors of the next generation.

【 授权许可】

Unknown