Majority and Minority Charge Carrier Traps in n-Type 4H-SiC Studied by Junction Spectroscopy Techniques

Electronic Materials

Ivana Capan¹  Tomislav Brodar¹ 

[1] Ruđer Bošković Institute, Bijenička 54, 10000 Zagreb, Croatia;

关键词: 4H-SiC;    Schottky barrier diodes;    defects;    DLTS;   

DOI  :  10.3390/electronicmat3010011

来源: DOAJ

【 摘 要 】

In this review, we provide an overview of the most common majority and minority charge carrier traps in n-type 4H-SiC materials. We focus on the results obtained by different applications of junction spectroscopy techniques. The basic principles behind the most common junction spectroscopy techniques are given. These techniques, namely, deep-level transient spectroscopy (DLTS), Laplace DLTS (L-DLTS), and minority carrier transient spectroscopy (MCTS), have led to recent progress in identifying and better understanding the charge carrier traps in n-type 4H-SiC materials.

【 授权许可】

Unknown