Far infrared and Raman response in tetragonal PZT ceramic films

Boletín de la Sociedad Española de Cerámica y Vidrio

Premysl Vaněk¹  Elena Buixaderas¹  Christelle Kadlec¹  Hana Uršič²  Silvo Drnovšek²  Barbara Malič² 

[1] Institute of Physics CAS, Na Slovance 2, 182 21 Praha 8, Czech Republic;Jozef Stefan Institute, Jamova 39, Sl-1000 Ljubljana, Slovenia;

关键词: Dielectric response;    Phonons;    FIR spectroscopy;    Time-domain THz spectroscopy;    Raman spectroscopy;    Effective medium;    PZT;   

DOI  :  10.1016/j.bsecv.2015.11.003

来源: DOAJ

【 摘 要 】

PbZr0.38Ti0.62O3 and PbZr0.36Ti0.64O3 thick films deposited by screen printing on (0 0 0 1) single crystal sapphire substrates and prepared at two different sintering temperatures, were studied by Fourier-transform infrared reflectivity, time-domain THz transmission spectroscopy and micro-Raman spectroscopy. The dielectric response is discussed using the Lichtenecker model to account for the porosity of the films and to obtain the dense bulk dielectric functions. Results are compared with bulk tetragonal PZT 42/58 ceramics. The dynamic response in the films is dominated by an overdamped lead-based vibration in the THz range, as known in PZT, but its evaluated dielectric contribution is affected by the porosity and roughness of the surface.

【 授权许可】

Unknown