As the scaling of electronic devices continues to decrease, the search for a low-power replacement for complementary metal-oxide semiconductor (CMOS)logic becomes increasingly important. A predicted room temperature phasetransition from Fermi liquid to Bose-Einstein condensate of excitons in doublelayer graphene has potential for use in ultra-low power device applications.These devices operate based on coherent interlayer transport and could faroutperform traditional CMOS devices both in switching speed and powerefficiency. When examining the possibility of a room-temperature excitoncondensate, it is important to consider the scattering of charge carriers byphonons in each of the constituent graphene monolayers. We use the non-equilibrium Green’s function (NEGF) formalism to examine the effect thatcarrier-phonon scattering has on transport in such a device. The simulationsshow that the effect of carrier-phonon scattering has a strong dependence onthe device coherence length, the maximum distance that individual electronsor holes may travel into the gapped superfluid region.
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Electron-phonon interactions in double layer graphene superfluids