Influence of Cr Ion Implantation on Physical Properties of CuO Thin Films

International Journal of Molecular Sciences

Katarzyna Ungeheuer¹  Konstanty Waldemar Marszalek¹  Piotr Jelen²  Maciej Sitarz²  Marta Marszalek³  Marzena Mitura-Nowak³  Marcin Perzanowski³ 

[1] Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, 30-059 Krakow, Poland;Faculty of Material Science and Ceramics, AGH University of Science and Technology, 30-059 Krakow, Poland;The Henryk Niewodniczanski Institute of Nuclear Physics Polish Academy of Sciences, 31-342 Krakow, Poland;

关键词: ion implantation;    cupric oxide;    thin film;    solar cell absorber;   

DOI  :  10.3390/ijms23094541

来源: DOAJ

【 摘 要 】

Cupric oxide is a semiconductor with applications in sensors, solar cells, and solar thermal absorbers. To improve its properties, the oxide was doped with a metallic element. No studies were previously performed on Cr-doping using the ion implantation technique. The research goal of these studies is to investigate how Cr ion implantation impacts the properties of the oxide thin films. CuO thin films were deposited using magnetron sputtering, and then chromium ions with different energies and doses were implanted. Structural, optical, and vibrational properties of the samples were studied using X-ray diffraction, X-ray reflectivity, infra-red spectroscopy, Raman spectroscopy, and spectrophotometry. The surface morphology and topography were studied with ellipsometry, atomic force microscopy, and scanning electron microscopy. A simulation of the range of ions in the materials was performed. Ion implantation had an impact on the properties of thin films that could be used to tailor the optical properties of the cupric oxide and possibly also its electrical properties. A study considering the influence of ion implantation on electrical properties is proposed as further research on ion-implanted CuO thin films.

【 授权许可】

Unknown