Sensitive Planar Microwave Diode on the Base of Ternary AlxGa1-xAs Semiconductor Compound

Sensors

Aldis Šilėnas¹  Andžej Lučun¹  Algirdas Sužiedėlis¹  Jonas Gradauskas¹  Maksimas Anbinderis¹  Aurimas Čerškus¹  Steponas Ašmontas¹ 

[1] Center for Physical Sciences and Technology, Savanorių Ave. 231, 02300 Vilnius, Lithuania;

关键词: planar diode;    microwave sensor;    voltage responsivity;    aluminum gallium arsenide;   

DOI  :  10.3390/s21134487

来源: DOAJ

【 摘 要 】

The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-Al_xGa_1-xAs layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate. The diodes can serve as reliable and inexpensive sensors of microwave radiation in the millimeter wavelength range; they sense electromagnetic radiation directly, without any external bias voltage at room temperature. The investigation revealed a strong dependence of the detection properties of the microwave diodes on AlAs mole fraction x: in the K_a microwave frequency range, the median value of voltage responsivity is several volts per watt in the case of GaAs-based diodes (x = 0), and it substantially increases, reaching hundreds of volts per watt at higher x values. Also, a model enabling us to forecast the responsivity of the sensor in other frequency ranges is proposed.

【 授权许可】

Unknown