A Thiazolothiazole-Based Semiconducting Polymer with Well-Balanced Hole and Electron Mobilities

Applied Sciences

Itaru Osaka¹  Masahiko Saito¹ 

[1] Department of Applied Chemistry, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan;

关键词: semiconducting polymer;    thiazolothiazole;    organic field-effect transistors;    n-type;    ambipolar;   

DOI  :  10.3390/app9030451

来源: DOAJ

【 摘 要 】

We report the synthesis and properties of a new thiazolothiazole (TzTz)-based semiconducting polymer incorporating the dithienothienothiophenebisimide (TBI) unit, named PTzTBI. PTzTBI showed relatively deep HOMO and LUMO energy levels of −5.48 and −3.20 eV, respectively. Although PTzTBI mainly formed face-on backbone orientation unfavorable for transistors, PTzTBI functioned as an ambipolar semiconductor for the first time with TzTz-based polymers, with reasonably high and well-balanced hole (0.02 cm² V⁻¹ s⁻¹) and electron (0.01 cm² V⁻¹ s⁻¹) mobilities.

【 授权许可】

Unknown