Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared

Sensors

Xiong Gong¹  Ming-Hong Tong¹  Sung Heum Park¹  Michelle Liu²  Alex Jen² 

[1] Center for Polymers and Organic Solids, University of California Santa Barbara, Santa Barbara, CA 93106-5090, USA; E-Mails:;Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195-4330, USA; E-Mails:

关键词: semiconducting polymer;    photodetectors;    blocking layers;    detectivity;   

DOI  :  10.3390/s100706488

来源: mdpi

【 摘 要 】

Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 10¹³ cm Hz^1/2/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors.

【 授权许可】

CC BY   
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