Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology

Technologies

Marc Sanquer¹  Andrea Corna¹  Paul Clapera¹  Xavier Jehl¹  Louis Hutin²  Sylvain Barraud²  Heorhii Bohuslavskyi²  Maud Vinet²  Romain Lavieville² 

[1] Institut Nanosciences et Cryogénie (INAC), Université Grenoble Alpes and CEA, F-38054 Grenoble, France;Laboratoire d’électronique des technologies de l’information (LETI), Université Grenoble Alpes and CEA, Minatec Campus, F-38054 Grenoble, France;

关键词: electron pumps;    electrical quantum metrology;    microelectronics;    MOSFETs;   

DOI  :  10.3390/technologies4010010

来源: DOAJ

【 摘 要 】

The definition of the ampere will change in the next few years. This electrical base unit of the S.I. will be redefined by fixing the value of the charge quantum, i.e., the electron charge e. As a result electron pumps will become the natural device for the mise en pratique of this new ampere. In the last years semiconductor electron pumps have emerged as the most advanced systems, both in terms of speed and precision. Another figure of merit for a metrological device would be its ability to be predictible and shared. For that reason a mature fabrication process would certainly be an advantage. In this article we present electron pumps made within a CMOS (Complementary Metal Oxide Semiconductor) research facility on 300 mm silicon-on-insulator wafers, using advanced microelectronics tools and processes. We give an overview of the whole integration scheme and emphasize the fabrication steps which differ from the normal CMOS route.

【 授权许可】

Unknown