P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping

Materials

Hongde Liu¹  Weiwei Wang¹  Yongfa Kong²  Wencan Li²  Jiao Cui²  Dahuai Zheng²  Longfei Jia²  Jingjun Xu²  Shahzad Saeed²  Romano Rupp² 

[1] School of Physics, Nankai University, Tianjin 300071, China;The MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, China;

关键词: lithium niobate film;    pulsed laser deposition;    nitrogen-doped;    p-type conductivity;   

DOI  :  10.3390/ma12050819

来源: DOAJ

【 摘 要 】

Nitrogen-doped lithium niobate (LiNbO3:N) thin films were successfully fabricated on a Si-substrate using a nitrogen plasma beam supplied through a radio-frequency plasma apparatus as a dopant source via a pulsed laser deposition (PLD). The films were then characterized using X-Ray Diffraction (XRD) as polycrystalline with the predominant orientations of (012) and (104). The perfect surface appearance of the film was investigated by atomic force microscopy and Hall-effect measurements revealed a rare p-type conductivity in the LiNbO3:N thin film. The hole concentration was 7.31 × 1015 cm−3 with a field-effect mobility of 266 cm2V−1s−1. X-ray Photoelectron Spectroscopy (XPS) indicated that the atom content of nitrogen was 0.87%; N atoms were probably substituted for O sites, which contributed to the p-type conductivity. The realization of p-type LiNbO3:N thin films grown on the Si substrate lead to improvements in the manufacturing of novel optoelectronic devices.

【 授权许可】

Unknown