Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

Coatings

Yunchae Jeon¹  Donghyun Lee²  Hocheon Yoo² 

[1] Department of Biomedical Engineering, Gachon University, 191 Hambangmoe-ro, Incheon 21936, Korea;Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Korea;

关键词: metal-oxide semiconductor;    flexible;    stretchable;    transparent;    IC circuit;    inverter;   

DOI  :  10.3390/coatings12020204

来源: DOAJ

【 摘 要 】

Thin-film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal-oxide-based thin-film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide-based thin-film transistors developed with high compatibility for integration to newly reported applications.

【 授权许可】

Unknown