Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel

Sensors

Assaf Lahav¹  Toshifumi Yokoyama²  Ikuo Mizuno²  Masafumi Tsutsui²  Masakatsu Suzuki²  Yoshiaki Nishi² 

[1] Tower Semiconductors, Migdal Haemeq 23105, Israel;TowerJazz Panasonic Semiconductor Co., Ltd., 800 Higashiyama, Uozu City, Toyama 937-8585, Japan;

关键词: global shutter;    parasitic light sensitivity (PLS);    dark current;   

DOI  :  10.3390/s18020349

来源: DOAJ

【 摘 要 】

Abstract: We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE). 1/PLS is 7700 and QE is 62% at a wavelength of 530 nm. We also propose a new storage-gate based memory node for low dark current. P-type implants and negative gate biasing are introduced to suppress dark current at the surface of the memory node. This memory node structure shows the world smallest dark current of 9.5 e−/s at 60 °C.

【 授权许可】

Unknown