Journal of Microelectronic Manufacturing | |
Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment | |
Asen Asenov1  Ali Rezaei1  Cristina Medina-Bailon1  Tapas Dutta1  Daniel Nagy1  Fikru Adamu-Lema1  Vihar P. Georgiev1  | |
[1] Device Modelling Group, James Watt School of Engineering, University of GlasgowG12 8LT Glasgow, UK; | |
关键词: integrated simulation environment; variability; drift-diffusion; quantum correction; kubo-greenwood; non-equilibrium green’s function; | |
DOI : 10.33079/jomm.20030404 | |
来源: DOAJ |
【 摘 要 】
This paper presents the latest status of the open source advanced TCAD simulator called Nano-Electronic Simulation Software (NESS) which is currently under development at the Device Modeling Group of the University of Glasgow. NESS is designed with the main aim to provide an open, flexible, and easy to use simulation environment where users are able not only to perform numerical simulations but also to develop and implement new simulation methods and models. Currently, NESS is organized into two main components: the structure generator and a collection of different numerical solvers; which are linked to supporting components such as an effective mass extractor and materials database. This paper gives a brief overview of each of the components by describing their main capabilities, structure, and theory behind each one of them. Moreover, to illustrate the capabilities of each component, here we have given examples considering various device structures, architectures, materials, etc. at multiple simulation conditions. We expect that NESS will prove to be a great tool for both conventional as well as exploratory device research programs and projects.
【 授权许可】
Unknown