Morphology and Dielectric Properties of Boron-doped BaTiO3

High Temperature Materials and Processes

Zhou Xiao Ping¹  Zheng Zhuo Qun² 

[1] ;Department of Chemical Engineering, Hunan University, Hunan 410082, China;

关键词: batio3;    boron doping;    grain growth;    phase transformation;    dielectric constant;   

DOI  :  10.1515/htmp-2012-0116

来源: DOAJ

【 摘 要 】

Boron-doped BaTiO3 precurors (BaTi1−xB2xO3+X) were prepared via the glycol-glycerol complexes of boron, titanium (IV), and barium. With optimum composition, ceramics with dielectric properties comparable to those of pristine BaTiO3 ceramic sintered at 1300°C can be obtained after sintered at temperature less than 900°C (room-temperature dielectric constant ∼4000, dielectric strength ∼7.0 kV/mm). The appreciable decrease in sintering temperature is attributable to (a) addition of boron dopant as substitute of titamium rather than to stochiometric BaTiO3, and (b) application of glycol-glycerol solvents/ligands in the synthesis of precursors, which guarantees the compositional homogenization of the final ceramics.

【 授权许可】

Unknown