Boron-doped MnTe semiconductor-sensitized ZnO solar cells

Bulletin of materials science

Auttasit Tubtimtae¹  Suwanna Sheangliw¹  Kritsada Hongsith²  Supab Choopun² 

[1] Department of Physics, Faculty of Liberal Arts and Science, Kasetsart University, Kamphaeng Saen Campus, Nakhon Pathom 73140, Thailand$$Department of Physics, Faculty of Liberal Arts and Science, Kasetsart University, Kamphaeng Saen Campus, Nakhon Pathom 73140, ThailandDepartment of Physics, Faculty of Liberal Arts and Science, Kasetsart University, Kamphaeng Saen Campus, Nakhon Pathom 73140, Thailand$$;Department of Physics and Material Sciences, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand$$Thailand Center of Excellence in Physics (ThEP Center), CHE, Bangkok 10400, Thailand$$Department of Physics and Material Sciences, Faculty of Science, Chiang Mai University, Chiang Mai 50200, ThailandDepartment of Physics and Material Sciences, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand$$Thailand Center of Excellence in Physics (ThEP Center), CHE, Bangkok 10400, Thailand$$Thailand Center of Excellence in Physics (ThEP Center), CHE, Bangkok 10400, ThailandDepartment of Physics and Material Sciences, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand$$Thailand Center of Excellence in Physics (ThEP Center), CHE, Bangkok 10400, Thailand$$

关键词: Manganese telluride;    boron doping;    successive ionic layer adsorption and reaction (SILAR);    solar cell.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

We studied the photovoltaic performance of boron-doped MnTe semiconductor-sensitized solar cells (B-doped MnTe SSCs). The B-doped MnTe semiconductor was grown on ZnO using two stages of the successive ionic layer adsorption and reaction (SILAR) technique. The two phases of B-doped semiconductor nanoparticles (NPs), i.e. MnTe and MnTe₂ were observed with a diameter range of approximately 15â€�??30 nm. The result of the energy conversion efficiency of the sample with boron doping was superior compared to that of an undoped sample, due to the substantial change in the short-circuit current density and the open-circuit voltage. In addition, plots of (ð›�? â„�? 𝜈)² vs â„�? 𝜈 with band gaps of 1.30 and 1.27 eV were determined for the undoped and B-doped MnTe NPs, respectively. It can be noted that the boron doping effects with the change in the band gap and lead to an improvement in the crystalline quality and also intimate contact between the larger sizes of MnTe NPs. Hence, a noticeably improved photovoltaic performance resulted. However, this kind of semiconductor sensitizer can be further extended by experiments on yielding a higher power conversion efficiency and greater stability of the device.

【 授权许可】

Unknown