Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in Semiconductors

IEEE Photonics Journal

G. Sharma¹  L. Razzari²  F. H. Su³  F. Blanchard⁴  M. Reid⁵  T. Ozaki⁶  H. C. Bandulet⁶  R. Morandotti⁶  J.-C. Kieffer⁶  T. L. Cocker⁷  F. A. Hegmann⁷  A. Ayesheshim⁷  L. V. Titova⁷ 

[1] $^{1}$INRS-EMT, Advanced Laser Light Source, Université du Québec, Varennes, Canada;$^{2}$Dipartimento di Elettronica, Università di Pavia, Pavia, Italy;$^{3}$Department of Physics, University of Alberta, Edmonton, Canada;$^{4}$Graduate School of Science, Kyoto University, Kyoto, Japan;$^{5}$Department of Physics, University of Northern British Columbia, Prince George, Canada;Adv. Laser Light Source, Univ. du Quebec, Varennes, QC, Canada;Dept. of Phys., Univ. of Alberta, Edmonton, AB, Canada;

关键词: Intervalley scattering;    semiconductors;    terahertz pulses;    time-resolved terahertz spectroscopy;    ultrafast nonlinear optics;    z-scan;   

DOI  :  10.1109/JPHOT.2010.2050873

来源: DOAJ

【 摘 要 】

Nonlinear dynamics of free carriers in direct bandgap semiconductors at terahertz (THz) frequencies is studied using the intense few-cycle source available at the Advanced Laser Light Source (ALLS). Techniques such as Z-scan and optical-pump/THz-probe are employed to explore nonlinear interactions in an n-doped InGaAs thin film and a photoexcited GaAs sample, respectively. The physical mechanism that gives rise to such interactions is found to be intervalley scattering. A simple Drude-based mathematical model that incorporates the intervalley scattering process is developed and agrees well with the THz response of free carriers in semiconductors.

【 授权许可】

Unknown