期刊论文详细信息
Results in Physics
Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method
Jaewon Jang1  Hyungtak Kim2  Kwangeun Kim3 
[1] Corresponding authors.;School of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of Korea;School of Electronics and Information Engineering, Korea Aerospace University, Goyang 10540, Republic of Korea;
关键词: Negative differential resistance;    Si;    GaAs;    Tunnel junction diode;    Nanomembrane transfer;   
DOI  :  
来源: DOAJ
【 摘 要 】

Negative differential resistance (NDR) region was established in Si/GaAs tunnel junction (TJ) formed by single crystalline nanomembrane (NM) transfer method. P + Si NM was transfer-printed onto n + GaAs epi-wafer, leading to the formation of Si/GaAs pn TJ diode comprised of crystalline semiconductors with no biaxial strain. Atomic-scale features at the Si/GaAs junction interface were analyzed by high-resolution transmission-electron-microscopy. The mechanism for NDR phenomenon in the electrical characteristics of Si/GaAs TJ diode was explained by the energy band diagram with a quantum mechanical band-to-band tunneling of carriers. The peak-to-valley-ratio value of TJ diode was 2.32. The results can be applicable to the fabrication of low-power circuits with a combination of lattice-mismatched crystalline semiconductors.

【 授权许可】

Unknown   

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